Characteristics of diffusion doping of the SiC/Si structure of semi-conductor microwave frequency sensor with phosphorus and boron the effect of internal electric field

The numerical modeling of the process of simultaneous diffusion doping with boron and phosphorus of the structure SiC/n-Si of the finite dimension under the influence of the internal electric field has been done. An original calculation program allowing obtaining results in the form of doping impurities electrons and holes, volume charge concentration curves, potential, electric field along the structure depending on external technological parameters, varying within a wide range of values (diffusion time, concentration of phosphorus doping the silicon layer, diffusion annealing temperature) has been worked out. The impurity distribution curves have been compared with the results, obtained without consideration of the internal electric field. The essential influence of the built-in electric field on the impurity migration has been discovered. The information about the character of disposition of p-n transition in the structure has been received.