Preparation of submicron cobalt films using cobalt oxalate as a precursor

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The possibility of obtaining porous two-dimensional cobalt structures (films) with submicron thickness using cobalt oxalate as a precursor during heat treatment in a hydrogen flow has been established. It is shown that the formation of two-dimensional structures on liquid low-melting metals (In, Ga) allows avoiding the formation of cracks and increases the integrity of Co films. It is shown that the thickness of Co films on Si reaches 100 nm, but the linear size of such cobalt sheets does not exceed 20 microns. The use of low-melting indium as a substrate makes it possible to increase the average size of Co films compared to Co films on silicon without an intermediate indium layer. The material is a thin two-dimensional layered structure of porous cobalt formed by interlacing metal chains. The film thickness is ~ 500 nm, and the linear size reaches 200 microns. The possibility of obtaining a durable metal film of Co-10% Ga on a massive drop of gallium measuring 20x15 mm has been established.

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作者简介

M. Alymov

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

N. Rubtsov

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences; Joint Institute for High Temperatures, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka; Moscow

V. Zelensky

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

A. Ankudinov

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

O. Boyarchenko

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

A. Sychev

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

V. Chernysh

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

G. Tsvetkov

Merzhanov Institute of Structural Macrokinetics and Problems of Material Science of the Russian Academy of Sciences

Email: nmrubtss@mail.ru
俄罗斯联邦, Chernogolovka

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2. Fig. 1. Morphology of a porous cobalt film obtained from Co oxalate deposited on a Si(100) surface: general view (a) and region (b) highlighted in Fig. 1a with a marker in the form of a circle, at higher magnification. When obtaining cobalt films, a saturated alcohol solution of the initial Co oxalate was diluted 10 times.

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3. Fig. 2. Morphology of a porous cobalt film obtained from Co oxalate (a) deposited on an In/Si(100) surface, and the region (b) highlighted in Fig. 2a by a marker in the form of a circle, at higher magnification. When obtaining cobalt films, a saturated alcohol solution of the initial Co oxalate was diluted 5 times.

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4. Fig. 3. Fragment of the Co–In–Si(100) sample. When obtaining cobalt films, the saturated alcohol solution of the initial Co oxalate was diluted 5 times.

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5. Fig. 4. a – Morphological features of the cobalt film obtained using an optical microscope, the upper left corner shows the appearance of the Co–In–Si(100) sample; b – SEM image of the indium surface after heat treatment, deposited on a Si(100) substrate; c – SEM image of the cobalt film with a trace of a diamond indenter; d – enlarged image in the area of ​​the indenter trace.

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6. Fig. 5. SEM image of the morphology of fragments of a thin porous cobalt film in the Co–Ga–Si(100) structure.

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7. Fig. 6. Morphology of a porous cobalt film obtained from Co oxalate (a) deposited on a Ga/Si(100) surface; b – a fragment of the region marked with a marker in Fig. 6a in the form of a circle, at higher magnification.

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8. Fig. 7. Metallic film Co – 10% Ga on a drop of gallium: a and b – different positions of the substrate.

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