Change in the charge state of MOS structures under radiation and high-field injection at constant voltage

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Аннотация

The features of radiation-induced positive charge accumulation in the gate dielectric film under high-field injection of electrons at the constant voltage are studied. The conditions are determined, under which the current injection mode can be used to increase the dose sensitivity of MOS (metal–oxide–semiconductor) and RADFET (Radiation sensing Field Effect Transistor) sensors. The model describing physical effects taking place in the gate dielectric and at the MOS structure interfaces under concurrent influence of radiation and high-field injection of electrons at constant voltage are improved. It is shown that the absorbed radiation dose at constant voltage on the sample can be calculated from changes in the current density of high-field electron injection. This dose can increase by several orders of magnitude due to the accumulation of radiation-induced positive charge in the gate dielectric. The influence of radiation intensity on the accumulation of radiation-induced positive charge in the gate dielectric of MOS sensors is determined.

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Авторлар туралы

D. Andreev

Bauman Moscow State Technical University

Хат алмасуға жауапты Автор.
Email: dmitrii_andreev@bmstu.ru
Ресей, Kaluga Branch, Kaluga

S. Kornev

Bauman Moscow State Technical University

Email: dmitrii_andreev@bmstu.ru
Ресей, Kaluga Branch, Kaluga

V. Andreev

Bauman Moscow State Technical University

Email: dmitrii_andreev@bmstu.ru
Ресей, Kaluga Branch, Kaluga

Әдебиет тізімі

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2. Fig. 1. Band diagram of a MOS structure under radiation irradiation and high-field electron injection: 1 — creation of electron-hole pairs by radiation; 2 — hole transport; 3 — hole capture in traps; 4 — high-field electron injection; 5 — annihilation of part of the holes by injected electrons; 6 — transport and heating of injected electrons; 7 — thermalization of hot electrons with hole creation.

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3. Fig. 2. Dose dependence of the shift in injection current density while maintaining a constant voltage on the MOS sensor (V0 = 65.5 V), providing an initial current density of 10 nA/cm2 at different radiation intensities: 1 - 10; 2 - 100 rad/s.

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4. Fig. 3. Theoretical (solid curves) and experimental (dots) dose dependences of the density of radiation-induced positive charge accumulated in the gate dielectric of a MOS structure under irradiation with α-particles: 0 — in the absence of voltage on the gate; 1, 2 — at a gate voltage of 65.5 V and a radiation intensity of 10 (1), 100 rad/s (2).

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